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TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (N-MOSV)

Code: 2396
Minimale afname: 2
Merk: Toshiba
Type: 2SK2750-TOS

• Low drain−source ON resistance : RDS (ON) = 1.7 Ω (typ.)
• High forward transfer admittance : |Yfs| = 3.0 S (typ.)
• Low leakage current : IDSS = 100 μA (max) (VDS = 600 V)
• Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Toshiba
Type	Transistor
Soort	N-FET
Behuizing	ISO220
Voltage	600 V
Stroom	3.5 A
Weerstand	2.2 R
Maximale snelheid	85 sec.
Vermogen	35 W

Prijs:

€ 1,49

Aantal

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